SI CORE-LEVEL XANES OF ORGANOMETALLIC COMPOUNDS CONTAINING SI-GE BONDS - EXPERIMENTAL AND THEORETICAL OBSERVATIONS

Authors
XIONG JZ SHAM TK
Citation
Jz. Xiong et Tk. Sham, SI CORE-LEVEL XANES OF ORGANOMETALLIC COMPOUNDS CONTAINING SI-GE BONDS - EXPERIMENTAL AND THEORETICAL OBSERVATIONS, Journal de physique. IV, 7(C2), 1997, pp. 493-494
Citations number
8
Categorie Soggetti
Physics
Journal title
Journal de physique. IV → ACNP
ISSN journal
11554339
Volume
7
Issue
C2
Year of publication
1997
Part
1
Pages
493 - 494
Database
ISI
SICI code
1155-4339(1997)7:C2<493:SCXOOC>2.0.ZU;2-X
Abstract
Si K-and L-2,L-3-edge XANES for Si(GeMe3)(4) and Ge(SiMe3)(4) are stud ied with the aid of MS-X alpha calculation. Good agreement is found be tween the experiment and the theory. The lowest energy features are as signed to the transitions to mostly unoccupied orbitals with significa nt Si-Ge contribution.