We report angular dependent X-ray absorption measurements at the Mo L-
3,L-2 edge and the Si K-edge for a MoSi2 single crystal. The crystal w
as oriented so that an azimuthal rotation of the cn stal about the sur
face normal (direction of the incident photons) would align the c-axis
of the crystal anywhere between parallel and perpendicular to the pol
arization of the photons. It was found that while the Mo L-3,L-2 edge
XANES shows little angular dependence, the Si K-edge XANES shows a ver
y strong polarization dependence of which the intensity exhibits a two
-fold symmetry. This angular dependence of the Si K-edge XANES is attr
ibuted to the high densities of unoccupied states localized perpendicu
lar to the Si-Si bond.