PHOTOELECTRON DIFFRACTION INVESTIGATION OF STRAINED INGAAS GROWN ON (001)-GAAS

Authors
PROIETTI MG TURCHINI S GARCIA J ASENSIO MC CASADO C MARTELLI F PROSPERI T
Citation
Mg. Proietti et al., PHOTOELECTRON DIFFRACTION INVESTIGATION OF STRAINED INGAAS GROWN ON (001)-GAAS, Journal de physique. IV, 7(C2), 1997, pp. 575-576
Citations number
5
Categorie Soggetti
Physics
Journal title
Journal de physique. IV → ACNP
ISSN journal
11554339
Volume
7
Issue
C2
Year of publication
1997
Part
1
Pages
575 - 576
Database
ISI
SICI code
1155-4339(1997)7:C2<575:PDIOSI>2.0.ZU;2-T
Abstract
We have performed Soft X-Ray Photoelectron Diffraction measurents, at the Ga3d, As3d and In4d core levels, to study the effects of strain on InGaAs grown on (001) GaAs. Polar and azimuthal scans have been recor ded and compared with Single Scattering Cluster Calculations. A good a greement is obtained between theory and experiment indicating that the lattice expands in the growth direction as predicted by the elastic t heory.