STIMULATED-EMISSION AND GAIN MEASUREMENTS IN INASP INP STRAINED-MULTIPLE-QUANTUM WELLS/

We have studied the stimulated emission from InAsP/InP strained-multip le-quantum wells at room temperature. The stimulated emission spectra were seen with three lobes, which are E-1H and E-1L transitions, and a transitions from heavy hole initial stares to localized interface sta tes. The E-1H transitions exhibited different gain value from that of the transitions between the heavy hole and the interface states. With increasing excitation intensity, the gain of the interface peak appear s to be saturated at lower excitation intensity. A method for identify ing the interface peak in the photoluminescene spectrum has been propo sed.