ALGAINP YELLOW-GREEN LIGHT-EMITTING-DIODES WITH A TENSILE STRAIN BARRIER CLADDING LAYER

A novel tensile strain barrier cladding (TSBC) structure is proposed w hich can effectively increase the potential barrier of the AIGaInP yel low-green light-emitting diodes (LED's). It was found that the electro luminescence intensity of the multiquantum well (MQW) + TSBC AIGaInP 5 73-nm LED is twice as large as that of the conventional MQW AIGaInP LE D emitting at the same wavelength, It was also found that the MQW + TS BC AlGaInP LED is less heat sensitive than the MQW and MQW + multiquan tum barrier (MQB) AIGaInP LED's. These results indicate that the MQW TSBC LED is useful particularly under high-temperature operation.