STRAIN-INDUCED HELIMAGNETISM, FINITE THICKNESS EFFECTS, AND INTERLAYER COUPLING IN MAGNETIC SEMICONDUCTOR MULTILAYERS

Citation
Tm. Giebultowicz et al., STRAIN-INDUCED HELIMAGNETISM, FINITE THICKNESS EFFECTS, AND INTERLAYER COUPLING IN MAGNETIC SEMICONDUCTOR MULTILAYERS, Physica. B, Condensed matter, 198(1-3), 1994, pp. 163-168
Citations number
12
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
09214526
Volume
198
Issue
1-3
Year of publication
1994
Pages
163 - 168
Database
ISI
SICI code
0921-4526(1994)198:1-3<163:SHFTEA>2.0.ZU;2-I
Abstract
Neutron diffraction studies of antiferromagnetic semiconductor superla ttices are reviewed. Mn-VI/II-VI multilayers (e.g. MnSe/ZnTe, MnSe/ZnS e) exhibit a variety of strain-induced effects in spin ordering and ph ase transition phenomena. In MnTe/CdTe systems, in which the thickness of the non-magnetic CdTe spacers can be very thin (approximately 6 an gstrom) and comparable with the range of the Mn-Mn exchange interactio ns, the measurements clearly show the onset of interlayer coupling. Pr onounced interlayer coupling has been observed in experiments on anoth er system, EuTe/PbTe, with much thicker (30-40 angstrom) non-magnetic layers - arguably, this coupling is maintained by dipolar fields.