P. Asokakumar, STUDIES OF DEFECTS IN THE NEAR-SURFACE REGION AND AT INTERFACES USINGLOW-ENERGY POSITRON BEAMS, Bulletin of Materials Science, 20(4), 1997, pp. 391-399
Positron annihilation spectroscopy (PAS) is a powerful probe to study
open-volume defects in solids. Its success is due to the propensity of
positrons to seek out low-density regions of a solid, such as vacanci
es and voids, and the emissions of gamma rays from their annihilations
that carry information about the local electronic environment. The de
velopment of low-energy positron beams allows probing of defects to de
pths of few microns, and can successfully characterize defects in the
near-surface and interface regions of several technologically importan
t systems. This review focuses on recent studies conducted on semicond
uctor-based systems.