D. Pal et Dn. Bose, STUDY OF PHOTOLUMINESCENCE AND COMPUTATION OF CONFIGURATION COORDINATE DIAGRAM OF CU RELATED DEEP LEVELS IN INP, Bulletin of Materials Science, 20(4), 1997, pp. 401-407
Photoluminescence has been studied in Cu diffused n and p-InP. In p-In
P a Cu related photoluminescence (PL) band was observed at 1.216 eV. T
he temperature dependence of line-width was studied and line-shape and
line-width analysis carried out. The configuration coordinate diagram
of the band was calculated which showed a small lattice relaxation of
0.079 Angstrom. In n-InP two PL bands at 1.20 and 1.01 eV were found
at 10 K. The former was similar to the 1.216 eV band in p-InP. The PL
of the 1.01 eV band was also studied in detail and the corresponding c
onfiguration coordinate diagram derived.