METASTABLE ALPHA-FESI2 FILMS GROWN ON SI(111) AT LOW-TEMPERATURE

Authors
STOCKER P GAY JM NATOLI JY
Citation
P. Stocker et al., METASTABLE ALPHA-FESI2 FILMS GROWN ON SI(111) AT LOW-TEMPERATURE, Physica. B, Condensed matter, 198(1-3), 1994, pp. 240-242
Citations number
7
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physica. B, Condensed matter → ACNP
ISSN journal
09214526
Volume
198
Issue
1-3
Year of publication
1994
Pages
240 - 242
Database
ISI
SICI code
0921-4526(1994)198:1-3<240:MAFGOS>2.0.ZU;2-S
Abstract
Grazing incidence X-ray diffraction has provided definite evidence for the existence of metastable alpha-FeSi2 films (40 angstrom) grown by molecular beam epitaxy (MBE) on Si(1 1 1) at low temperature (550-degr ees-C) and previously suggested by a RHEED study. For thicker films (> 350 angstrom) grown on silicon by chemical beam epitaxy (CBE), alpha- FeSi2 has also been observed in coexistence with a beta-FeSi2 layer, b ut it disappears upon annealing.