MECHANISMS OF THE ELECTRONIC RELAXATION OF THE HG(1P1) STATE IN LOW-TEMPERATURE MATRICES

Citation
C. Crepin et al., MECHANISMS OF THE ELECTRONIC RELAXATION OF THE HG(1P1) STATE IN LOW-TEMPERATURE MATRICES, Journal of physical chemistry, 98(13), 1994, pp. 3280-3284
Citations number
21
Categorie Soggetti
Chemistry Physical
ISSN journal
00223654
Volume
98
Issue
13
Year of publication
1994
Pages
3280 - 3284
Database
ISI
SICI code
0022-3654(1994)98:13<3280:MOTERO>2.0.ZU;2-Z
Abstract
The fluorescence-excitation and fluorescence spectra as well as the fl uorescence decay times were recorded for Hg atoms excited to the 6P-1( 1) state by synchrotron radiation in Ar, Kr, Xe, N2, and CH4 matrices and in Ar matrices with a low ammonia content. It was shown that seque ntial decays from the 6P-1(1) to different 6(3)P(J) levels involve the intersystem crossing and intramultiplet relaxation, the dependence of the relaxation rate on the properties of the matrix being different f or the two mechanisms.