GALLIUM CRYSTAL-CHEMISTRY IN SYNTHETIC GOETHITES

Authors
MARTIN F ILDEFONSE P HAZEMANN JL MATHE PE NOACK Y GRAUBY O BEZIAT D DEPARSEVAL P
Citation
F. Martin et al., GALLIUM CRYSTAL-CHEMISTRY IN SYNTHETIC GOETHITES, Journal de physique. IV, 7(C2), 1997, pp. 821-822
Citations number
7
Categorie Soggetti
Physics
Journal title
Journal de physique. IV → ACNP
ISSN journal
11554339
Volume
7
Issue
C2
Year of publication
1997
Part
2
Pages
821 - 822
Database
ISI
SICI code
1155-4339(1997)7:C2<821:GCISG>2.0.ZU;2-2
Abstract
The distribution of Ga and Al atoms within the octahedral sheets of sy nthetic goethites has been investigated by XRD and Ga K-edge XANES and EXAFS spectroscopies. XRD results indicate a solid solution between g oethite (alpha FeOOH) and GaGoe4 (40 mol% of Ga), The XANES data indic ate the presence of Ga-6 in the solid solution. The fitting procedures for EXAFS spectra show no evidence of preferential octahedral site su bstitutions for Ga.