Ay. Ignatov et al., ELECTRONIC-STRUCTURE OF ND1.85CE0.15CUO4-DELTA, IRRADIATED BY HE- AN X-RAY-ABSORPTION STUDY ON THE CU-L-3 AND CE-M-4,M-5 EDGES( IONS ), Journal de physique. IV, 7(C2), 1997, pp. 1123-1124
Polarisation-dependent x-ray absorption spectroscopy at the Cu L-3 and
Ce M-4,M-5 edges have been performed on the epitaxial films Nd1.85Ce0
.15CuO4-delta vs. defect concentration induced by He+ ion irradiation.
The Cu L-3 edge exhibits increasing of integral intensity of both the
white line in E parallel to ab and the first peak in E parallel to c
by about 15% and 30%, respectively, after suppression of superconducti
vity. The partial filling of Ce 4f orbitals (similar to 15%) takes pla
ce although the Ce ions remain formally tetravalent, Ce+4. Thus, XAS e
xperiments give a clear evidence that the excess electrons leave Cu 3d
(x)(10)2(-y)2 orbital and become simultaneously localised in the Ce-O(
2) chains. The symmetry of the free states and the mechanism of superc
onductivity suppression in Nd1.85Ce0.15CuO4-delta under He+ ion irradi
ation are discussed.