XAFS STUDIES OF SELF-ALIGNED PLATINUM SILICIDE THIN-FILMS AT THE PT M-3,M-2 EDGE AND THE SI K-EDGE

Pt-Si thin films with the thickness of several hundred Angstrom prepar ed on n-type Si(100) by UHV sputter-deposition procedures and subseque nt annealing have been studied with X-ray absorption fine structure sp ectroscopy at the Pt M-3,M-2 edge and the Si K-edge. It is found that. under favourable conditions. single phase PtSi films can be obtained. These films exhibit the same XAFS characteristics as those of bulk sa mples. The M-3,M-2 edge exhibits XANES features very similar to those of the Pt L-3,L-2 edge obtained from the samples. Tile analysis of the Pt M-3,M-2 edge whiteline and the Si K-edge results show significant charge redistribution at both Pt and Si sites upon silicidation.