XAFS STUDIES OF DILUTED MAGNETIC SEMICONDUCTORS ZN1-XMXS (M=MN, CO)

X-ray absorption near edges structure (XANES) spectra of the Diluted M agnetic Semiconductors (DMS) system Zn1-xMxS (M=Mn, Co) have been meas ured at the Mn and Co L-3,L-2-edge using sample current mode. Analysis of the M L-3,L-2-edge XANES spectra for Zn1-xMxS revealed the presenc e of a white line feature in each series, whose intensity increased li nearly with concentration x. The white line feature is assigned to M 2 p(3/2) and 2p(1/2) photoelectron excitations to nonbonding 3d(e) state s and to the relatively broadened band of M 3d(t(2)) - S 3p hybridized antibonding states. The rate of increase of L-3,L-2 white line intens ity with x is associated with the difference in the degree of p-d hybr idization of states between M 3d and S 3p.