EPITAXIAL-GROWTH OF Y2O3 FILMS ON SI(100) WITHOUT AN INTERFACIAL OXIDE LAYER

Heteroepitaxial Y2O3 films were grown on Si(100) substrates by the tec hnique of reactive ionized cluster beam deposition. The crystallinity of the films was investigated with reflection high energy electron dif fraction (RHEED), glancing angle x-ray diffraction (GXRD), and the int erface was examined by high resolution transmission electron microscop y (HRTEM). Under the condition of 5 kV acceleration voltage at the sub strate temperature of 800 degrees C, the Y2O3 film grows epitaxially o n the Si(100) substrate. RHEED and GXRD results revealed that the epit axial relationship between Y2O3 and Si(100) is Y2O3(110)//Si(100), and HRTEM observation showed a sharp interface without an amorphous layer . (C) 1997 American Institute of Physics.