ENHANCED SB SEGREGATION IN SURFACTANT-MEDIATED-HETEROEPITAXY - HIGH-MOBILITY, LOW-DOPED GE ON SI

Surfactant-mediated epitaxy (SME) allows the growth of smooth, continu ous, relaxed, and principally defect free Ge films directly on Si(111) ; however, the very high surfactant doping level in the range of the s olid solubility limit made them unacceptable for most device applicati ons. By using high temperature SME we have reduced the Sb surfactant b ackground doping level by more than three orders of magnitude. This is attributed to an enhanced surfactant segregation without kinetic limi tations. The low Sb incorporation has been determined by an electrical characterization: An electron concentration of 1.1x10(16) cm-(3) and a very high electron Hall mobility of 3100 cm(2)/V s at 300 K (12 300 cm(2)/V s at 77 K suggest an interesting potential of SME grown Ge fil ms fur future device applications. (C) 1997 American Institute of Phys ics.