HYBRID HALL-EFFECT DEVICE

A novel magnetoelectronic device incorporating a single microstructure d ferromagnetic film and a micron scale Hall cross was fabricated and characterized at room temperature, magnetic fringe fields from the edg e of the ferromagnet generate a Hall voltage in a thin film semiconduc ting Hall bar. The sign of the fringe field, as well as the sign of th e output Hall voltage, is switched by reversing the magnetization of t he ferromagnet. This new device has excellent output characteristics a nd scaling properties, and may find application as a magnetic held sen sor, nonvolatile storage cell, or logic gate. (C) 1997 American Instit ute of Physics.