DEVICE PERFORMANCE AND RELIABILITY OF P-CHANNEL METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS WITH CHEMICAL-VAPOR-DEPOSITED GATE OXIDES

This paper reports the performance and reliability of p-channel metal- oxide-semiconductor field effect transistors (MOSFETs) with ultrathin (65 Angstrom) low pressure chemical-vapor-deposited (LPCVD) gate oxide s annealed in N-2 ambient as compared to those with thermal gate oxide s of identical thickness. It is shown that MOSFETs with CVD gate oxide s exhibit better initial performance (transconductance, current drivab ility, and effective hole mobility) and enhanced reliability (transcon ductance degradation, threshold voltage shift, enhancement in gate-ind uced drain leakage, and hot-electron-induced punchthrough) than the MO SFETs with thermal gate oxides. Furthermore: significantly improved ti me-dependent dielectric breakdown characteristic of CVD gate oxide has been demonstrated. Strainless CVD SiO2 after proper post-deposition a nnealing and the substrate-independent film formation mechanism are sp eculated to result in the improvements in performance and reliability of CVD oxide devices.