METALORGANIC CHEMICAL-VAPOR-DEPOSITION STUDY USING TERTIARYBUTYLPHOSPHINE AND TERTIARYBUTYLARSINE FOR INALGAP LIGHT-EMITTING DIODE FABRICATION

We have investigated the possibility of using tertiarybutylphosphine ( TBP) for metalorganic chemical vapor deposition (MOCVD) of Al-containi ng materials through InAlGaP light-emitting diode (LED) fabrication. I t has been shown that a marked decrease in the performance of InAlGaP LEDs results from Zn diffusion into the active layer. The diffusion of Zn in the In-0.5(Al0.7Ga0.3)(0.5)P cladding layer can be enhanced by increasing interstitial soup-III, I-III. According to our growth model , an intrinsic disadvantage of TBP is that it decomposes at a temperat ure much lower than the substrate temperature and produces less-active phosphorus molecules (P-4). Since the vapor pressure of P-4 is extrem ely high, it leads to lower effective V/III ratios on the growth surfa ce and generation of I-III. In order to increase the effective V/III r atio, we have proposed new organic phosphorus sources that are expecte d to provide a large number of PHx (x = 0-2) radicals on the surface.