SIMULATION FOR THE MICROCRYSTALLINE SILICON THIN-FILM TRANSISTORS BY CONSIDERING THE CHANGE OF ACCEPTOR-LIKE STATE AND MICROCRYSTAL GRAIN-SIZE EFFECT

A numerical simulation to predict and analyze the characteristics of m icrocrystalline silicon thin-film transistors have been proposed. This model is derived ii om the Poisson's equation, with the consideration of the effect of microcrystal grain size. The microcrystalline silico n acceptor-like state characteristic energies are modified by the chan ge of energy gap, This proposed model conforms fairly well with the ex perimental data.