HIGH-COUPLING EFFICIENCY OF A 1.3-MU-M SPOT-SIZE CONVERTER INTEGRATEDLASER-DIODE WITH PN-BURIED HETEROSTRUCTURE FOR HIGH-TEMPERATURE OPERATION

Citation
Y. Suzaki et al., HIGH-COUPLING EFFICIENCY OF A 1.3-MU-M SPOT-SIZE CONVERTER INTEGRATEDLASER-DIODE WITH PN-BURIED HETEROSTRUCTURE FOR HIGH-TEMPERATURE OPERATION, Journal of lightwave technology, 15(8), 1997, pp. 1602-1607
Citations number
16
Categorie Soggetti
Optics
ISSN journal
07338724
Volume
15
Issue
8
Year of publication
1997
Pages
1602 - 1607
Database
ISI
SICI code
0733-8724(1997)15:8<1602:HEOA1S>2.0.ZU;2-2
Abstract
We propose a novel design concept for low-loss coupling with high lase r performance in a spot-size converter integrated laser diode (SS-LD) with a pn-buried heterostructure (pn-BH) and demonstrate both the good coupling efficiency and high laser performance. We clarify that a hig h position and a high doping concentration of an n-InP current blockin g layer in the pn-BH are favorable for high-coupling efficiency with a single-mode fiber by a two-dimensional (2-D) finite-element method-ba sed calculation. By using the proposed concept, low-loss coupling of 1 .6 dB with a low threshold current of 5.5 mA at room temperature and 1 9.6 mA even at 85 degrees C was achieved experimentally.