ELECTRON AND ION ENERGY CONTROLS IN A RADIO-FREQUENCY DISCHARGE PLASMA WITH SILANE

Electron and ion energy distribution functions are controlled in a rad io-frequency (rf) discharge plasma with silane for production of hydro genated amorphous silicon films. We apply the grid-bias method to an r f silane plasma in order to obtain a low electron-temperature (T-e sim ilar or equal to 0.2eV) and low ion-temperature (T-i similar or equal to 0.1eV) plasma. The ion beam energy is controlled by biasing the sub strate. We find that the room temperature hole drift mobility is incre ased by two orders of magnitude compared to the conventional value at an ion beam energy between 23 eV and 24 eV.