STUDY OF ION-INDUCED SECONDARY PHOTON-EMISSION IN REACTIVE ION ETCHING EXPERIMENT

Optical emission spectroscopy with high spatial resolution was employe d for the study of surface sputtering under reactive ion etching condi tions in chlorine-containing gas mixtures. Secondary photon emission ( both atomic and molecular) from the processed material was found to be strongly localized near the surface. A simple model, considering the observed features of the secondary photon emission as induced by ion s puttering of the processed surface, has been presented. This technique can give new opportunities for in-situ, diagnostics and modeling of p lasma-surface interaction in various plasma technologies.