A self-consistent two dimensional numerical fluid model of rf plasmas
under conditions close to those of the experiments for observing parti
cle growth in silane rf plasmas has been developed. The geometry of th
e discharge chamber and the electrodes used in the model is cylindrica
lly symmetric: two cylinders for the electrodes are surrounded by the
grounded chamber. The rf plasmas are in SiH4(10%)/Ar(90%) at a pressur
e of 100 m Torr at 6.5 MHz. The results from the model, including the
rf plasma structures and the generation rates for radicals, SiH, SiH2
and SiH3, are presented. Effects of the applied rf voltage and the sec
ondary electron emission coefficient on the generation rates of the ra
dicals are discussed.