S. Hong et al., STRUCTURE AND MAGNETISM OF FE3-XCOXSI LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-2.5) EPITAXIALLY STABILIZED ON SI(111), Journal of magnetism and magnetic materials, 171(3), 1997, pp. 280-290
Fe3-xCoxSi (0 less than or equal to x less than or equal to 2.5) films
have been epitaxially grown for the first time on Si(111) by codeposi
tion at room temperature. Low-and medium-energy electron diffraction,
X-ray photoelectron diffraction, X-ray diffraction as well as Si 2p co
re-level photoemission measurements indicate the formation of cubic ep
itaxial Fe3-xCoxSi(111) phases. They are found to crystallize in a cub
ic structure derived by substitution from alpha-Fe, with a lattice par
ameter close to half that of silicon. These silicides form a random al
loy as evidenced by the lack of DO3-type long-range order, usually obs
erved in the Fe,Si stoichiometric compound. By using ex situ magneto-o
ptic Kerr-effect experiments, hysteresis curves for different magnetic
held directions have been measured at room temperature. The data demo
nstrate ferromagnetic behavior with a strong in-plane uniaxial anisotr
opy in spite of the threefold symmetry of the cubic structure of these
Fe3-xCoxSi silicides. It is found that the easy axis is parallel to a
[-101] crystallographic direction.