The held emission properties of thin, fine-grained diamond films were
investigated by measuring emission currents versus electric field curv
es. The measurements were performed with a spherical electrode attache
d to a piezoelectric positioning system. The lateral distribution was
analyzed by accelerating emitted electrons onto a fluorescent screen.
In addition the transient behavior of the emission current was investi
gated. These characterization techniques were applied to a large numbe
r of CVD diamond films deposited by microwave plasma-assisted CVD. The
samples were prepared with various methane concentrations (0.5-7%) an
d deposition temperatures (700-900 degrees C). Undoped as well as boro
n-and nitrogen-doped samples were studied. Under optimized conditions
threshold field strengths as low as 2 V/mu m were realized, yielding c
urrent densities in the range of several mA/cm(2) at 5 V/mu m. The den
sity of emission sites is on the order of 10(4) sites/cm(2). (C) 1997
Elsevier Science S.A.