ELECTRON FIELD-EMISSION FROM THIN FINE-GRAINED CVD DIAMOND FILMS

Citation
F. Lacher et al., ELECTRON FIELD-EMISSION FROM THIN FINE-GRAINED CVD DIAMOND FILMS, DIAMOND AND RELATED MATERIALS, 6(9), 1997, pp. 1111-1116
Citations number
13
Categorie Soggetti
Material Science
ISSN journal
09259635
Volume
6
Issue
9
Year of publication
1997
Pages
1111 - 1116
Database
ISI
SICI code
0925-9635(1997)6:9<1111:EFFTFC>2.0.ZU;2-H
Abstract
The held emission properties of thin, fine-grained diamond films were investigated by measuring emission currents versus electric field curv es. The measurements were performed with a spherical electrode attache d to a piezoelectric positioning system. The lateral distribution was analyzed by accelerating emitted electrons onto a fluorescent screen. In addition the transient behavior of the emission current was investi gated. These characterization techniques were applied to a large numbe r of CVD diamond films deposited by microwave plasma-assisted CVD. The samples were prepared with various methane concentrations (0.5-7%) an d deposition temperatures (700-900 degrees C). Undoped as well as boro n-and nitrogen-doped samples were studied. Under optimized conditions threshold field strengths as low as 2 V/mu m were realized, yielding c urrent densities in the range of several mA/cm(2) at 5 V/mu m. The den sity of emission sites is on the order of 10(4) sites/cm(2). (C) 1997 Elsevier Science S.A.