EFFECT OF PHOTOETCHING ON POROUS SILICON MORPHOLOGY

Authors
GUERREROLEMUS R MORENO JD MARTINPALMA RJ MARTINEZDUART JM HERRERO P MARCOS ML GONZALEZVELASCO J GOMEZ P
Citation
R. Guerrerolemus et al., EFFECT OF PHOTOETCHING ON POROUS SILICON MORPHOLOGY, Surface and interface analysis, 25(9), 1997, pp. 677-682
Citations number
13
Categorie Soggetti
Chemistry Physical
Journal title
Surface and interface analysis → ACNP
ISSN journal
01422421
Volume
25
Issue
9
Year of publication
1997
Pages
677 - 682
Database
ISI
SICI code
0142-2421(1997)25:9<677:EOPOPS>2.0.ZU;2-1
Abstract
The morphological differences between porous silicon formed in the dar k or under illumination have been studied by means of gravimetric meas urements, transmission electron microscopy, infrared spectroscopy and cyclic voltammetry, Photoetching has been found to give rise to a comp lex surface structure, due to the presence of narrower outer silicon f ibres, which suffer a more severe cracking process upon drying, (C) 19 97 by John Wiley & Sons, Ltd.