THE 2-D-3-D CROSSOVER IN MODULATION-DOPED GAAS-GA1-XALXAS QUANTUM-WELLS

Authors
QU FY MORAIS PC
Citation
Fy. Qu et Pc. Morais, THE 2-D-3-D CROSSOVER IN MODULATION-DOPED GAAS-GA1-XALXAS QUANTUM-WELLS, IEEE journal of quantum electronics, 33(9), 1997, pp. 1492-1497
Citations number
16
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
IEEE journal of quantum electronics → ACNP
ISSN journal
00189197
Volume
33
Issue
9
Year of publication
1997
Pages
1492 - 1497
Database
ISI
SICI code
0018-9197(1997)33:9<1492:T2CIMG>2.0.ZU;2-E
Abstract
We report on a method to analyze the 2-D-3-D crossover in n-type modul ation-doped quantum webs, Finite well barrier, first and second subban d population, many-body effects, and residual doping are included in o ur calculation, We found that the 2-D-3-D crossover remarkably depends not only upon the geometrical parameters, as for instance, the spacer layer width and quantum-well width, but also upon a residual p-type d oping intentionally introduced, A diagram showing the 2-D-3-D dimensio nal crossover is presented.