DEFECT FORMATION IN GEO2-SIO2 GLASS BY POLING WITH ARF LASER EXCITATION

We have investigated formation of Ge-related defects in a GeO2-SiO2 gl ass fiber preformed by poling with ArF laser excitation. Electric held dependence of the induced-defect concentrations was measured by means of the optical absorption. Several color centers such as the germaniu m electron-trapped centers and the Ge E' center were induced. Concentr ations of the induced germanium electron-trapped centers and Ge E' cen ter increase with increasing the electric field. Conversion efficiency from the germanium electron-trapped centers to the Ge E' center was f ound to be independent of the electric field. The present result stron gly suggests that the poling with ArF laser excitation is effective in the present GeO2-SiO2 glass for the formation of germanium electron-t rapped centers. (C) 1997 American Institute of Physics.