FIELD AND TEMPERATURE EFFECTS ON OXIDE CHARGE DETRAPPING IN A METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR BY MEASURING A SUBTHRESHOLDCURRENT TRANSIENT

A technique to characterize oxide charge detrapping in a Fowler-Nordhe im stressed n-metal-oxide-semiconductor field effect transistor is pro posed. This technique consist of two alternating phases, an oxide char ge detrapping phase and a subthreshold current measurement phase. An a nalytical model relating a subthreshold current transient to oxide cha rge density and detrapping time constants was derived. By varying the gate bias in the detrapping phase and the ambient temperature, the fie ld and temperature dependences of oxide charge detrapping can be obtai ned from the subthreshold current transients measured. (C) 1997 Americ an Institute of Physics.