ATOMIC NITROGEN DOPING IN P-ZNSE MOLECULAR-BEAM EPITAXIAL-GROWTH WITHALMOST 100-PERCENT ACTIVATION RATIO

An almost 100% activation ratio {(N-A-N-D)/[N]} for a nitrogen-doped Z nSe molecular beam epitaxy (MBE) layer with the highest net acceptor c oncentration (N-A-N-D) of 1.2x10(18) cm(-3) was obtained using a high- power rf plasma source. Even at this high N-A-N-D value, a 4.2 K photo luminescence spectrum shows bound exciton emission and deep donor-acce ptor pair emission with well-resolved phonon replicas. The high activa tion in nitrogen doping could be ascribed to the generation of the pre dominant atomic nitrogen and to the suppressed extraction of nitrogen ions and excited neutral nitrogen molecules due to the structure of th e orifice placed between the MBE growth chamber and the plasma dischar ge tube of the high-power plasma source. (C) 1997 American Institute o f Physics.