PERSISTENT PHOTOCONDUCTIVITY IN N-TYPE GAN

Persistent photoconductivity has been observed in n-type GaN:Si. The e ffect is seen at room temperature in both nonoptimally grown films as well as in device quality channel layers, The relaxation dynamics are found to agree with a stretched exponential model of recovery, A compa rison between different samples, based upon stretched exponential para meters, Hall measurements, and photoluminescence data is made, The dat a suggest that the cause of persistent photoconductivity is the same a mong the different samples and that there is a transition in the relax ation dynamics between room temperature and 130 degrees C. (C) 1997 Am erican Institute of Physics.