SELECTION OF SUBSTRATE ORIENTATION AND PHOSPHORUS FLUX TO ACHIEVE P-TYPE CARBON DOPING OF GA0.5IN0.5P BY MOLECULAR-BEAM EPITAXY

We show that the p-type doping of Ga0.5In0.5P grown by solid-source mo lecular beam epitaxy using CBr4 as a carbon source is very strongly de pendent upon the phosphorus flux and upon the substrate misorientation from (100). High densities of A-type steps and low phosphorus flux fa vor the incorporated carbon acting as a p-type dopant. We demonstrate that with the substrate orientation and phosphorus flux chosen to sati sfy these two criteria, doping of C:Ga0.5In0.5P into the mid-10(18) ho les/cm(3) range can be achieved for the as-grown material. (C) 1997 Am erican Institute of Physics.