BAND ALIGNMENTS IN GAINP GAP/GAAS/GAP/GAINP QUANTUM-WELLS/

Authors
KWOK SH YU PY UCHIDA K ARAI T
Citation
Sh. Kwok et al., BAND ALIGNMENTS IN GAINP GAP/GAAS/GAP/GAINP QUANTUM-WELLS/, Applied physics letters, 71(8), 1997, pp. 1110-1112
Citations number
17
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
71
Issue
8
Year of publication
1997
Pages
1110 - 1112
Database
ISI
SICI code
0003-6951(1997)71:8<1110:BAIGGQ>2.0.ZU;2-R
Abstract
Pressure-dependent photoluminescence (PL) in several GaInP(ordered)-Ga As quantum well structures grown by metal organic vapor phase epitaxy is reported. Quantum well emission from GaAs is observed only in struc tures when thin (similar to 2 nm) GaP layers an inserted between the G aAs well and the GaInP barrier. By extrapolating the energies of the v arious inter and intralayer PL transitions observed under pressures (u p to 5.5 GPa) to zero pressure, the different band offsets of the hete rostructure have been determined. (C) 1997 American Institute of Physi cs.