OPTICALLY DETECTED CYCLOTRON-RESONANCE PROPERTIES OF HIGH-PURITY ZNSEEPITAXIAL LAYERS GROWN ON GAAS

Authors
DRECHSLER M MEYER BK HOFMANN DM RUPPERT P HOMMEL D
Citation
M. Drechsler et al., OPTICALLY DETECTED CYCLOTRON-RESONANCE PROPERTIES OF HIGH-PURITY ZNSEEPITAXIAL LAYERS GROWN ON GAAS, Applied physics letters, 71(8), 1997, pp. 1116-1117
Citations number
9
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
71
Issue
8
Year of publication
1997
Pages
1116 - 1117
Database
ISI
SICI code
0003-6951(1997)71:8<1116:ODCPOH>2.0.ZU;2-Y
Abstract
The conduction band electron properties in ZnSe epitaxial layers on Ga As grown by molecular beam epitaxy are determined by far-infrared opti cally detected cyclotron resonance experiments. The high omega tau-val ue (in excess of 800) allows the observation of the spin splitting of the cyclotron resonance, The splitting is 8 mT in agreement with theor etical predictions. (C) 1997 American Institute of Physics.