KRF LITHOGRAPHY FOR 0.25-MU-M CMOS SIMOX PATTERN FABRICATION/

Authors
KAWAI Y OHTAKA A NAKAMURA J TANAKA A
Citation
Y. Kawai et al., KRF LITHOGRAPHY FOR 0.25-MU-M CMOS SIMOX PATTERN FABRICATION/, NTT review, 9(4), 1997, pp. 96-104
Citations number
14
Categorie Soggetti
Engineering, Eletrical & Electronic",Telecommunications
Journal title
NTT review → ACNP
ISSN journal
09152334
Volume
9
Issue
4
Year of publication
1997
Pages
96 - 104
Database
ISI
SICI code
0915-2334(1997)9:4<96:KLF0CS>2.0.ZU;2-5
Abstract
We developed a novel chemically amplified positive resist for KrF lith ography. In order to process with it, sophisticated process technologi es with good control had to be developed. Consequently, a pattern size accuracy of less than +/- 10 % and an overlay accuracy of less than 0 .12 mu m was obtained in LSI fabrication.