Some emission properties of Alternating Current Electroluminescencent
(AC EL) structures containing thin chalcogenide films of the systems A
s-S or Ge-Sb-S are investigated by means of optogalvanic effect. The o
ptogalvanic characteristics of red emitting structures at different co
nditions of their excitation are presented. Conclusions about the beha
viour of the emission are drawn and some possibilities of the proposed
method for the examination of the AC EL structures are analysed.