THEORETICAL-STUDY OF P-I-N PHOTODETECTORS POWER LIMITATIONS FROM 2.5 TO 60 GHZ

In this paper, we present a theoretical study. and a numerical simulat ion of various long wavelength top-illuminated p-i-n photodetectors in the frequency range of 2.5-60 GHz under high optical modulated power at 1.55-mu m wavelength. The modeling includes a monodimensional Drift -Diffusion model for the device and takes into account the external ci rcuit, We considered six InP/GaInAs/InP photodetectors especially desi gned to work at 2.5, 10, 20, 30, 40, and 60 GHz, respectively, For the one with the highest frequency, we intentionally sacrificed the quant um efficiency in order to compare them at the end with the results alr eady obtained in the case of waveguide p-i-n photodetectors. The resul ts show the maximum microwave-output power for each photodetector at i ts specific working frequency. Additionally, we present the effects of the modulation depth, the hack illumination, and the wavelength 1.3 m u m.