A SCALABLE HIGH-FREQUENCY NOISE MODEL FOR BIPOLAR-TRANSISTORS WITH APPLICATION TO OPTIMAL TRANSISTOR SIZING FOR LOW-NOISE AMPLIFIER DESIGN

Authors
VOINIGESCU SP MALIEPAARD MC SHOWELL JL BABCOCK GE MARCHESAN D SCHROTER M SCHVAN P HARAME DL
Citation
Sp. Voinigescu et al., A SCALABLE HIGH-FREQUENCY NOISE MODEL FOR BIPOLAR-TRANSISTORS WITH APPLICATION TO OPTIMAL TRANSISTOR SIZING FOR LOW-NOISE AMPLIFIER DESIGN, IEEE journal of solid-state circuits, 32(9), 1997, pp. 1430-1439
Citations number
20
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
IEEE journal of solid-state circuits → ACNP
ISSN journal
00189200
Volume
32
Issue
9
Year of publication
1997
Pages
1430 - 1439
Database
ISI
SICI code
0018-9200(1997)32:9<1430:ASHNMF>2.0.ZU;2-P
Abstract
Fully scalable, analytical HF noise parameter equations for bipolar tr ansistors are presented and experimentally tested on high-speed Si and SiGe technologies, A technique for extracting the complete set of tra nsistor noise parameters from Y parameter measurements only is develop ed and verified, Finally, the noise equations are coupled with scalabl e variants of the HICUM and SPICE-Gummel-Poon models and are employed in the design of tuned low noise amplifiers (LNA's) in the 1.9-, 2.4-, and 5.8-GHz bands.