A SIMPLE AND ACCURATE MESFET CHANNEL-CURRENT MODEL INCLUDING BIAS-DEPENDENT DISPERSION AND THERMAL PHENOMENA

Authors
ROH TM KIM Y SUH Y PARK WS KIM B
Citation
Tm. Roh et al., A SIMPLE AND ACCURATE MESFET CHANNEL-CURRENT MODEL INCLUDING BIAS-DEPENDENT DISPERSION AND THERMAL PHENOMENA, IEEE transactions on microwave theory and techniques, 45(8), 1997, pp. 1252-1255
Citations number
13
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
IEEE transactions on microwave theory and techniques → ACNP
ISSN journal
00189480
Volume
45
Issue
8
Year of publication
1997
Part
1
Pages
1252 - 1255
Database
ISI
SICI code
0018-9480(1997)45:8<1252:ASAAMC>2.0.ZU;2-G
Abstract
A new channel-current model of GaAs MESFET suitable for applications t o microwave computer-aided design (CAD) has been developed. This model includes the frequency-dispersion effects due to traps and thermal ef fects. The model parameters are extracted from pulsed I-V measurements at several ambient temperature and quiescent bias points. This model is verified by simulating nonlinear circuits, such as a power amplifie r and a mixer.