HIGHER RESOLUTION STUDIES OF SHALLOW BOUND EXCITON LUMINESCENCE IN DIAMOND

Luminescence produced by the decay of excitons bound to neutral boron accepters in diamond is reported at higher resolution than hitherto. T he line-widths of the phonon-assisted processes are consistent with th e electron and hole of the bound exciton having a spatial localization within an effective Bohr radius of about 0.85 nm. New fine structure is reported in the no-phonon components of the luminescence, caused by splittings in both the ground and excited states of the localized par ticles.