TEMPERATURE-DEPENDENCE OF THE HALL-MOBILITY OF N-TYPE 3C-SIC

Authors
Citation
Xm. Weng et Hl. Cui, TEMPERATURE-DEPENDENCE OF THE HALL-MOBILITY OF N-TYPE 3C-SIC, Journal of physics. Condensed matter, 9(33), 1997, pp. 7089-7094
Citations number
16
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
09538984
Volume
9
Issue
33
Year of publication
1997
Pages
7089 - 7094
Database
ISI
SICI code
0953-8984(1997)9:33<7089:TOTHON>2.0.ZU;2-W
Abstract
The Hall mobility of n-type 3C-SiC has been calculated employing a set of hydrodynamic balance equations. The acoustic, polar optical, piezo electric, and intervalley optical lattice scattering, as well as the i onized and neutral impurity scattering are considered in the transport study. The calculated Hall mobility is in good agreement with the exp erimental data from 70 K to 1000 K. The Hall factor is shown to be les s than unity, due to the nonparabolicity of the energy bands.