A P-GE1-XCX N-SI HETEROJUNCTION DIODE CROWN BY MOLECULAR-BEAM EPITAXY/

We report on the fabrication and characterization of the first p-n dio de made from a heterojunction of epitaxial p-type Ge0.998C0.002 on an n-type Si substrate. Epitaxial Ge0.998C0.002 was grown on a (100) Si s ubstrate by solid source molecular beam epitaxy. The p-GeC/n-Si juncti on exhibits diode rectification. The I-V characteristics of the p-GeC/ n-Si diode indicate a reasonable reverse saturation current of 89 pA/m u m(2) at -1 V and a high reverse breakdown voltage in excess of -40 V . Photoresponse from the Ge0.998C0.002 p-n diode was observed from 1.3 -mu m laser excitation resulting in an external quantum efficiency of 1.4%.