HEATING MECHANISMS OF LDMOS AND LIGBT IN ULTRATHIN SOI

Temperature rises due to self-heating in silicon-on-insulator (SOI) po wer devices may lead to performance degradation and reliability proble ms. This letter investigates the mechanisms and spatial distribution o f heat generation in linearly graded SOI LDMOS and LIGBT devices. Whil e Joule heating dominates in LDMOS devices, hole collection at the p-w ell-drift region junction contributes strongly to the heating of LIGBT 's. Also, the presence of both Joule and recombination heating makes t he heating profile more uniform in LIGBT's. These effects combine to y ield a temperature rise in LIGBT's that is more uniform and lower on a verage than that in LDMOS devices.