THE GATE BIAS AND GEOMETRY DEPENDENCE OF RANDOM TELEGRAPH SIGNAL AMPLITUDES

A new random telegraph signal (RTS) amplitude model based upon band be nding fluctuations has been developed, In contrast to other studies of RTS noise amplitudes, which are derived from RTS fitting parameters, it is demonstrated in this work that noise amplitudes may be predicted from band bending calculations and device de characteristics. This ne w model suggests that the decrease in band bending associated with slo w-state trapping results in mobility degradation for Low gate biases ( Coulombic-scattering-limited) and an enhancement in mobility due to ve rtical field reductions at high gate biases (surface roughness/phonons cattering limited). The band bending formulation shows good correlatio n with experimental data and accurately predicts the observed dependen ce upon effective channel length and width.