FABRICATION AND CHARACTERIZATION OF SI-MOSFETS WITH PECVD AMORPHOUS TA2O5 GATE INSULATOR

Authors
AUTRAN JL DEVINE R CHANELIERE C BALLAND B
Citation
Jl. Autran et al., FABRICATION AND CHARACTERIZATION OF SI-MOSFETS WITH PECVD AMORPHOUS TA2O5 GATE INSULATOR, IEEE electron device letters, 18(9), 1997, pp. 447-449
Citations number
11
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
IEEE electron device letters → ACNP
ISSN journal
07413106
Volume
18
Issue
9
Year of publication
1997
Pages
447 - 449
Database
ISI
SICI code
0741-3106(1997)18:9<447:FACOSW>2.0.ZU;2-0
Abstract
Silicon MOS transistors having amorphous Ta2O5 insulator gates have be en fabricated. The Ta2O5 films were deposited using a low pressure (a few mtorr) plasma-enhanced CVD process in a microwave (2.45 Ghz) excit ed electron cyclotron resonance reactor, The source gas was TaF5. Elec trical characteristics of p-channel Al gate transistors are presented.