ELECTRONIC-STRUCTURE OF GAN STACKING-FAULTS

The calculation of the electronic structure of the GaN stacking faults in the framework of the local empirical pseudopotential theory is pre sented. The stacking faults in both zinc-blende and wurtzite GaN are p redicted to introduce electronic levels within the band gap, with the energy (0.13+/-0.01) eV above the valence-band top. These levels are f ound to originate from interface states of heterocrystalline wurtzite (0001)-zinc-blende (111) interfaces. The possible implications of stac king fault electronic states on the luminescence properties of GaN are discussed.