MICROSCOPIC CARBON DISTRIBUTION IN SI1-YCY ALLOYS - A RAMAN-SCATTERING STUDY

Authors
MELENDEZLIRA M LORENTZEN JD MENENDEZ J WINDL W CAVE NG LIU R CHRISTIANSEN JW THEODORE ND CANDELARIA JJ
Citation
M. Melendezlira et al., MICROSCOPIC CARBON DISTRIBUTION IN SI1-YCY ALLOYS - A RAMAN-SCATTERING STUDY, Physical review. B, Condensed matter, 56(7), 1997, pp. 3648-3650
Citations number
16
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physical review. B, Condensed matter → ACNP
ISSN journal
01631829
Volume
56
Issue
7
Year of publication
1997
Pages
3648 - 3650
Database
ISI
SICI code
0163-1829(1997)56:7<3648:MCDISA>2.0.ZU;2-C
Abstract
Si1-yCy alloys grown by solid-phase epitaxy of carbon-implanted Si wer e investigated with Raman spectroscopy A comparison between the experi mental Raman spectrum and the spectrum predicted from nb initio calcul ations shows that the carbon distribution in these samples is more ran domized than in similar alloys grown by molecular-beam epitaxy. It is argued that epitaxial, layer-by-layer growth promotes the formation of ordered Si-C structures.