STRUCTURAL, DYNAMICAL, ELECTRONIC, AND BONDING PROPERTIES OF LASER-HEATED SILICON - AN AB-INITIO MOLECULAR-DYNAMICS STUDY

Citation
Pl. Silvestrelli et al., STRUCTURAL, DYNAMICAL, ELECTRONIC, AND BONDING PROPERTIES OF LASER-HEATED SILICON - AN AB-INITIO MOLECULAR-DYNAMICS STUDY, Physical review. B, Condensed matter, 56(7), 1997, pp. 3806-3812
Citations number
50
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
01631829
Volume
56
Issue
7
Year of publication
1997
Pages
3806 - 3812
Database
ISI
SICI code
0163-1829(1997)56:7<3806:SDEABP>2.0.ZU;2-A
Abstract
The method of ab initio molecular dynamics, based on finite-temperatur e density-functional theory, is used to simulate laser heating of crys talline silicon. We found that a high concentration of excited electro ns dramatically weakens the covalent bonding. As a result the system u ndergoes a melting transition to a metallic state. We studied several structural, dynamical, electronic, and bonding properties of this phas e of silicon. In contrast to ordinary liquid silicon, this liquid is c haracterized by a high coordination number and a strong reduction of c ovalent-bonding effects. However this phase is transient. In fact, by strongly reducing the level of electronic excitation, liquid silicon r everts very rapidly to its usual properties.