KARDAR-PARISI-ZHANG GROWTH OF AMORPHOUS-SILICON ON SI SIO2/

Amorphous silicon films with thicknesses ranging from about 20 Angstro m to 2000 Angstrom were evaporated onto silicon substrates. The surfac e and interfaces were then investigated by specular and diffuse x-ray scattering experiments in the region of total external reflection. A m odel of self-affine interfaces was used for the refinement. The rms ro ughness sigma and the in-plane correlation length xi vs film thickness follow power laws with exponents of beta=0.1+/-0.05 and 1/z=0.6+/-0.2 , and the average Hurst parameter is h=0.23+/-0.05. The resulting para meters are compatible with growth models based on the Kardar-Parisi-Zh ang equation.